Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.669433
Title: The development of silicon compatible processes for HEMT realisation
Author: Cao, Menglin
ISNI:       0000 0004 5368 9681
Awarding Body: University of Glasgow
Current Institution: University of Glasgow
Date of Award: 2015
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Abstract:
Compound semiconductor (III-V) devices are crucially important in a range of RF/microwave applications. High Electron Mobility Transistors (HEMTs), as the best low noise high frequency compound semiconductor devices, have been utilised in various applications at microwave and mm-wave frequencies such as communications, imaging, sensing and power. However, silicon based manufacturing will always be the heart of the semiconductor industry. III-V devices are conventionally fabricated using gold-based metallisation and lift off processes, which are incompatible with silicon manufacturing processes based on blanket metal or dielectric deposition and subtractive patterning by dry etching techniques. Therefore, the challenge is to develop silicon compatible processes for the realisation of compound semiconductor devices, whilst not compromising the device performance. In this work, silicon compatible processes for HEMT realisation have been developed, including the demonstration of a copper-based T-gate with the normalised DC resistance of 42 Ω/mm, and the presentation of a gate-first process flow which can incorporate the copper-based T-gate. The copper electroplating process for fabricating T-gate head with the maximum width of 2.5 µm, low damage inductively coupled plasma molybdenum etching process for realising T-gate foot with the minimum footprint of 30 nm, and the full gate-first process flow with non-annealed ohmic contact are described in detail. In addition, this thesis also describes the fabrication and characterisation of a 60 nm footprint gold-based T-gate HEMT realised by conventional III-V processes, yielding a cutoff frequency fT of 183GHz and maximum oscillation frequency fmax of 156GHz. In the comparison between these two types of HEMT, it is anticipated that a HEMT with the copper-based T-gate would not only have a larger maximum frequency of oscillation fmax, but also an easier incorporation into a silicon based manufacturing fab in terms of process technologies, than a HEMT with the gold-based T-gate.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.669433  DOI: Not available
Keywords: T Technology (General) ; TK Electrical engineering. Electronics Nuclear engineering
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