Use this URL to cite or link to this record in EThOS:
Title: Novel power electronic device structures for power conditioning applications
Author: Balachandran, Ajith
ISNI:       0000 0004 5366 8733
Awarding Body: University of Sheffield
Current Institution: University of Sheffield
Date of Award: 2014
Availability of Full Text:
Access from EThOS:
Full text unavailable from EThOS. Thesis embargoed until 01 Oct 2019
Access from Institution:
The work presented in this thesis contains an investigation into the methods by which the semiconductor device performance can be improved with an aim to reduce the overall losses in the power conversion system. The types of devices discussed and evaluated in this thesis include Silicon MOSFETs, IGBT, CIGBT and GaN HEMT devices. The performance improvement methods suggested in literature usually involve a trade-off of device characteristics with one another. Therefore an investigation into new device technologies and structures is deemed necessary such that the performance trade-off can be avoided or be improved.
Supervisor: Jewell, Geraint Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available