Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.664015
Title: A model of VLSI specimen charging in the scanning electron microscope
Author: Worlock, Stephen
Awarding Body: University of Edinburgh
Current Institution: University of Edinburgh
Date of Award: 1992
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Abstract:
When VLSI devices are viewed using a Scanning Electron Microscope (SEM) with a low energy (1keV) primary beam, exposed dielectric surfaces can undergo charging. Such charging can have an adverse effect on voltage contrast testing of the device. The aim of this thesis is to improve understanding of charging behaviour. By adopting common VLSI materials and typical voltage contast SEM configurations, it makes a qualitative study of the factors that influence VLSI specimen charging. A model of specimen charging, based on the study, is then formulated and assessed.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.664015  DOI: Not available
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