Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.659935
Title: Hot carrier effects in IGFETs
Author: Neves, Hercules Pereira
Awarding Body: University of Edinburgh
Current Institution: University of Edinburgh
Date of Award: 1991
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Abstract:
In this work the analysis of hot carrier generation and injection in insulated-gate field effect transistors (IGFETs) is carried out with the aid of offset gate transistors. Several sets of transistors with systematically incremented gate offsets were produced for this investigation. The inclusion of photolithographically and angled-implant defined LDD (lightly doped drain) regions was also attempted, but no consistent calibration technique was found for the former and fabrication problems made the latter impractical. The charge pumping technique and the gated diode current method were employed in the evaluation of the generation of interface states and fixed charges. An adapted double-pulse charge pumping method was used to assess the energy distribution of interface states across the forbidden zone. The use of offset gate transistors made it possible to identify hot electron and hot hole degradation separately under different biasing conditions. Additionally, it suggested a clearer interpretation of the possible mechanisms involved in the degradation process.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.659935  DOI: Not available
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