Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.658823
Title: Confined nanoscale chalcogenide phase change material and memory
Author: Huang, Ruomeng
ISNI:       0000 0004 5356 1725
Awarding Body: University of Southampton
Current Institution: University of Southampton
Date of Award: 2015
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Abstract:
The miniaturization of memory devices has been one of the major driving forces in the exploration of ever faster, smaller and more efficient memory concepts. Among all the competitors for the next generation of non-volatile memory, phase change materials based random access memory has emerged as a leading candidate. A better understanding of nanoscale properties of phase change materials and the ability of selective depositing them into confined nanostructures are substantially important in the long march towards smaller more densely packed memory bits. A novel top-down spacer etch technique has been developed for fabricating sub hundred nanometre phase change Ge2Sb2Te5 nanowires. Taking advantage of this technique which allows precise control over nanowire position and geometries, the contact properties between phase change material and metallic electrode in nanoscale can be quantitatively investigated. The results reveal a specific contact resistance of 7.56 x 10-5.
Supervisor: De Groot, Cornelis Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.658823  DOI: Not available
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