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Title: Photon coupling effects and advanced characterisations of multiple-quantum-well multi-junction solar cells
Author: Lee, Kan-Hua
ISNI:       0000 0004 5348 7887
Awarding Body: Imperial College London
Current Institution: Imperial College London
Date of Award: 2014
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Achieving optimal band-gap combinations of multi-junction solar cells at production level is the most difficult challenge in concentrator photovoltaics. To improve the state-of-the-art InGaP/InGaAs/Ge triple-junction cells, it requires that the band gaps of the top and middle junction to be lower or an additional 1 eV junction. This involves lattice-mismatch growth or introducing dilute nitrides materials, which makes it difficult to scale up to production at low cost. Strain-balanced multiple quantum wells (MQWs) in the middle junction has been very well-studied as a means to adjust the absorption edges of the middle junction in multi-junction solar cells. To fully optimise the efficiency of solar cells with MQW GaAs subcell, an InGaP top cell with MQWs also has to be introduced to achieve current-matching. The aim of this thesis is to address the issues of production multi-junction cell with MQWs. We studied the material properties of MQW InGaP subcells and demonstrated its strong photon coupling effects in multi-junction devices. Several characterisation techniques were developed to acquire deeper understanding of the material qualities and sheet resistance of MQW solar cells.
Supervisor: Ekins-Daukes, Nicholas; Stavrinou, Paul Sponsor: QUANTASOL Ltd
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available