Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.653865
Title: CMOS compatible EWOD microfluidic systems
Author: Li, Y.
Awarding Body: University of Edinburgh
Current Institution: University of Edinburgh
Date of Award: 2008
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Abstract:
This thesis reports a CMOS compatible fabrication procedure that enables ElecroWetting On Dielectric (EWOD) technology to be post-processed on foundry technology. With driving voltages less than 15V it is believed to be the lowest reported driving voltage for any material system compatible with post-processing on integrated circuits. The process architecture uses anodically grown tantalum pentoxide as the pinhole free high dielectric constant insulator with the overlying 16nm layer of Teflon-AF, which provides the hydrophobic surface upon which droplets can be manipulated. This stack provides a very robust dielectric, which maintains a sufficiently high capacitance per unit area for effective operation at the lower voltage favoured by more standard CMOS technology. The thesis demonstrates that the sputtered tantalum layer can be integrated with the aluminium (or copper) interconnect of foundry CMOS processes by standard microfabrication techniques. Different EWOD systems and applications fabricated in this CMOS compatible way are developed and discussed in this thesis.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.653865  DOI: Not available
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