Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.651355
Title: IC optimisation using parallel processing and response surface methodology
Author: Gaston, Godfrey Jonathan
Awarding Body: University of Edinburgh
Current Institution: University of Edinburgh
Date of Award: 1992
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Abstract:
Simulation software has become an essential tool in the design and development of integrated circuits. The key to the rapid and efficient designs required in the competitive industry lies with the use of these simulators with statistical optimisation methods. This is necessary if companies are to survive in the aggressive IC marketplace. The linking of simulation and statistics not only results in rapid development times, but also in robust, highly manufacturable products. In this work an automated software system is presented where the benefits of simulation and statistical techniques can be readily made available. The efficiency of the system is increased further by utilising parallel processing techniques. Using one system built round the INMOS transputer and one using Intel 1860 processors, the time taken to obtain simulation results is greatly reduced. Two statistical methods are investigated, namely Response Surface Methodology (RSM) and Taguchi analysis. In order to illustrate how these approaches can be utilised in the field of semiconductors, part of a 1.5 μm nMOS process is optimised in relation to some specified device parameters. A comparison is made between both techniques, with good agreement being obtained. Finally devices have also been fabricated using the same experimental design as for the RSM simulation analysis. This facilitated a verification of the simulation optimisation with reality. Both simulated and fabricated devices suggested the same improved optimised conditions when compared to the existing process parameters.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.651355  DOI: Not available
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