Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.648586
Title: Analysis of metal oxide thin film transistors with high-k dielectrics and source/drain contact metals
Author: Kiani, Ahmed
ISNI:       0000 0004 5350 1001
Awarding Body: University of Cambridge
Current Institution: University of Cambridge
Date of Award: 2014
Availability of Full Text:
Full text unavailable from EThOS.
Please contact the current institution’s library for further details.
Abstract:
No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.648586  DOI: Not available
Keywords: Thin film transistors
Share: