Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.638305
Title: Numerical modelling of 2-D local oxidation of silicon by the boundary element method
Author: Needs, M. J.
Awarding Body: University College of Swansea
Current Institution: Swansea University
Date of Award: 1988
Availability of Full Text:
Access from EThOS:
Abstract:
This research is concerned with the development and application of numerical models which represent the dynamics of selective oxidation of silicon in two dimensions. Proceeding from a natural extension of the well-established one dimensional theory, Boundary Element based models have been formulated which are able to simulate the kinetics of oxide growth under comprehensive process conditions. The techniques adopted seek to model the 'Bird's Beak' phenomenon by means of a simple, two-step, quasi-static approach. This requires the solution of two uncoupled boundary value problems at each timestep; one describing the diffusion of the oxidising species in the oxide, and the other concerning the displacement of the domain boundaries. The models presented are appropriate for the prediction of the oxide profiles evolved during non-uniform oxidation processes, and also for the evaluation of stress field distributions for the silicides under consideration. Simulation results are provided which demonstrate the validity of the models to reproduce the characteristics of the physical situation.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.638305  DOI: Not available
Share: