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Title: Power semiconductor devices : two-dimensional simulation and compact model development
Author: Li, Z. M.
Awarding Body: University of Wales Swansea
Current Institution: Swansea University
Date of Award: 1997
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The mixed-mode modelling methodology is essential to extend the benefit of computer-aided design (CAD) techniques to the design of power electronic circuits. The mixed-mode environment can be established in two ways. One is through adopting device circuit models into the two-dimensional device simulator. The other is through introducing finite-element device models into the circuit simulator. In the first method, an effective numerical algorithm has been proposed for adopting advanced compact models for power devices into a general-purpose two-dimensional mixed-mode device/circuit simulator. A suite of compact models for major power devices are implemented into the simulator and validated. In the second method, simplified numerical models for power diodes and insulated gate bipolar transistors (IGBT) for the circuit simulator Saber is proposed. Comparisons of the new models with the other compact model and the experimental result are made and show good agreement. It is also shown that the speed of the numerical models can be increased enormously to be comparable with the speed of other compact models in some cases by using specific numerical techniques. Techniques for measuring fast power devices and extracting the parameters are studied and enhanced, a commercial IGBT device is measured, the parameter extraction procedure applied and device characterised. Two-dimensional device simulation has been used extensively for understanding the devices and to help in the compact model development. Two-dimensional numerical analysis of the quasi-saturation phenomenon in the vertical double-diffused MOS (VDMOS) device is carried out and improved design proposed.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available