Use this URL to cite or link to this record in EThOS:
Title: The control of metal-silicon carbide contacts using a silicon interlayer
Author: Lee, W. Y.
Awarding Body: University of Wales Swansea
Current Institution: Swansea University
Date of Award: 2004
Availability of Full Text:
Access from EThOS:
Metal-SiC contacts play a crucial role in the fabrication of quality SiC based devices. The problems associated with carbon segregation and graphite formation between metal-SiC interfaces are the common basis of electrical instability and device degradation when operating at high temperatures. A  successful composite design should consider the interface reactions between reinforcement materials, together with individual materials properties. Ni-SiC has demonstrated a great potential in quality contacts with low-resistivity. However, at high temperature, the Ni-SiC interface had also faced C segregation at the interface. This thesis reports on a detailed study on circumventing the problems associated with interfacial carbon formation in Ni-SiC contact using a Si interlayer between the Ni and SiC. The interface properties of the contact were studied using X-ray photoelectron spectroscopy (XPS), low energy electron diffraction (LEED) and scanning tunnelling microscopy (STM)  alternately. The chemical and electrical properties of Ni-Si-SiC contacts were studied using different thickness of Si interlayer to determine an optimal thickness of the Si interlayer to control the interface properties. The thermal stability of the contacts was also studied by annealing the contacts from 400°C to 1200°C. The performances of the Ni-Si-SiC contacts were gauged via current-voltage measurements. Finally, the study was extended by comparing the results obtained with a control experiment, Ni-SiC contacts without Si interlayer to distinguish the role of the Si interlayer in Ni-SiC contacts.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available