Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.637818
Title: Investigation of thermal oxidation on silicon carbide for power metal-oxide-semiconductor devices
Author: Koh, A.
Awarding Body: University of Wales Swansea
Current Institution: Swansea University
Date of Award: 2002
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Abstract:
The rapid progress in the semiconductors technology and the increasing demand in performance for the high power and high frequency semiconductor devices have prompt for the search of a new semi-conducting material to meet the needs in the new millennium. Silicon Carbide (SiC), a wide band gap compound semiconductor is deemed to be the most likely candidate for its unique ability to thermally oxidise, forming Silicon Dioxide (SiO2). This advantage allows the fabrication of Metal-Oxide-Semiconductor (MOS) devices on SiC, thus has been a focus in the semiconductor research arena with a drastic increase in world-wide research activities particularly during the last two years. The research work in this thesis focuses on the basics of the thermal oxidation on Silicon Carbide, investigating on the physics behind the problems hampering the ability to grow oxide of acceptable quality of MOS device application. This is achieved by providing experimental results supporting initial hypothetical "Carbon Cluster Model" phenomenon described by Bassler et, al. observed in SiC/SiO2 interface. This is of vital importance as the success of fabricating a SiC MOS device would ultimately depends on the ability to produce high quality oxide with low SiC/SiO2 interface states density and other oxide trap charges. The work also includes a comparative study on the different methods of thermal oxidation on SiC such as conventional wet and dry thermal oxidation on SiC, and Sacrificial Silicon Oxidation (SSO) and SiC, which utilises the advantage of temperature differences between thermally oxidising Silicon (Si) and SiC. This has yield promising results. Consequently the results also suggest that the SSO technique, when optimised can be further utilised as a form of surface preparation of SiC.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.637818  DOI: Not available
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