Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.637429
Title: Tensile creep of sintered silicon carbide
Author: Jiang, H.
Awarding Body: University College of Swansea
Current Institution: Swansea University
Date of Award: 1994
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Abstract:
Pressureless sintered silicon carbide is currently being evaluated for advanced aeroengine applications because it provides the best combination of strength retention and oxidation resistance at high temperatures. In the present work, tensile creep and creep fracture behaviour of sintered SiC has been investigated. Creep tests have been performed under constant stress and temperature ranges from 125 to 400 MPa and 1673 to 1873 K respectively. The sintered SiC exhibits primary dominated creep curves and little or no tertiary stage in all cases studied. It is established that the SiC displays a brittle-creep behaviour. The creep fracture behaviour has been studied by examining the fracture surfaces and longitudinal sections of failed test-pieces after creep exposure. It is concluded that creep fracture occurs by the formation and propagation of microcracks developed along the grain boundaries during creep deformation. All failures that have occurred immediately on loading are identified to be caused by pre-existing voids (large pores) which are the result from incomplete local sintering during manufacture.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.637429  DOI: Not available
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