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Title: Studies on semi-insulating polycrystalline silicon
Author: Weston, P. J.
Awarding Body: University College of Swansea
Current Institution: Swansea University
Date of Award: 1988
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The properties of Semi-Insulating Polycrystalline Silicon (SIPOS) have been investigated for a wide range of oxygen content. This thesis details and discusses results pertaining to its growth, its structural composition, its electrical characteristics, and the modelling of its electrical characteristics. SIPOS was grown using Low Pressure Chemical Vapour Deposition of silane and nitrous oxide. The ratio of the flow rates of these gases was found to control the oxygen content and growth rate of the SIPOS. The structural composition was investigated using Auger Electron Spectroscopy. This showed that SIPOS is a two-phase mixture of silicon and silicon dioxide. The electrical characteristics were investigated by measuring current as a function of voltage applied to a vertical SIPOS structure. Measurements were also made of current as a function of temperature with a constant applied voltage. The results showed that current flow in SIPOS is a Poole Frenkel or Schottky type process. Modelling of the current flow in SIPOS as a function of voltage, oxygen content, and temperature, was on the basis of series connected dual dielectrics and the continuity of current flow in silicon and silicon dioxide. The results showed that percolation effects need to be accounted for.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available