Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.636351
Title: Metal-insulator-semiconductor and semiconductor-barrier two-state devices and their applications
Author: Darwish, M. N. M. A. El
Awarding Body: University College of Swansea
Current Institution: Swansea University
Date of Award: 1981
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Abstract:
New forms of two state Metal-(leaky)Insulator-Semiconductor Switch (MISS) are investigated. Models are developed in which regenerative switching in M-I-S-M and M-I-S-I-M structures with tunnel insulator is predicted. In the latter device two distinct operating modes are distinguished, one in which switching occurs near punch through and the other where a flatband condition is reached before switching occurs. M-I-S-I-M structures are also shown to exhibit bidirectional (Diac-like) I-V characteristics. Experimental observations of such switching are presented in V-groove and surface devices. Bidirectional switching with third terminal operation (Triac-like) has also been observed. Another form of the device is also analysed (Metal-(n-type) Polysilicon-n-p+). First the barrier produced by a p-type impurity plane at the grain boundary is studied in detail and a small signal gain is predicted when minority carrier injection is present. A model of such a barrier in conjunction with a p+-n junction placed within a diffusion length of it is analysed in detail and switching predicted. A new mode of switching is defined in such devices 'Thermionic Mode' where switching is initiated by the barrier turn on. A model of the metal-(n-type) polysilcon-n-p+ device is also discussed and experimental data which corroborate the theory presented. Finally, a selection of applications in which the device is a key element is demonstrated.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.636351  DOI: Not available
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