Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.631032
Title: Integration of planar Gunn diodes and HEMTs for high-power MMIC oscillators
Author: Papageorgiou, Vasileios
ISNI:       0000 0004 5355 0663
Awarding Body: University of Glasgow
Current Institution: University of Glasgow
Date of Award: 2014
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Abstract:
This work has as main objective the integration of planar Gunn diodes and high electron mobility transistors (HEMTs) on the same chip for the realisation of high-power oscillators in the millimeter-wave regime. By integrating the two devices, we can reinforce the high frequency oscillations generated by the diode using a transistor-based amplifier. The integration of the planar Gunn diode and the pseudomorphic HEMT was initially attempted on a combined gallium arsenide (GaAs) wafer. In this approach, the active layers of the two devices were separated by a thick buffer layer. A second technique was examined afterwards where both devices were fabricated on the same wafer that included AlGaAs/InGaAs/GaAs heterostructures optimised for the fabrication of pHEMTs. The second approach demonstrated the successful implementation of both devices on the same substrate. Planar Gunn diodes with 1.3 μm anode-to-cathode separation (Lac) presented oscillations up to 87.6 GHz with a maximum power equal to -40 dBm. A new technique was developed for the fabrication of 70 nm long T-gates, improving the gain and the high frequency performance of the transistor. The pHEMT presented cut-off frequency (fT) equal to 90 GHz and 200 GHz maximum frequency of oscillation (fmax). The same side-by-side approach was applied afterwards for the implementation of both devices on an indium phosphide (InP) HEMT wafer for the first time. Planar Gunn diodes with Lac equal to 1 μm generated oscillations up to 204 GHz with -7.1 dBm maximum power. The developed 70 nm T-gate technology was applied for the fabrication of HEMTs with fT equal to 220 GHz and fmax equal to 330 GHz. In the end of this work, the two devices were combined in the same monolithic microwave integrated circuit (MMIC), where the diode was connected to the transistor based amplifier. The amplifier demonstrated a very promising performance with 10 dB of stable gain at 43 GHz. However, imperfections of the material caused large variations at the current density of the devices. As a consequence, no signals were detected at the output of the complete MMIC oscillators.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.631032  DOI: Not available
Keywords: TK Electrical engineering. Electronics Nuclear engineering
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