Use this URL to cite or link to this record in EThOS:
Title: Dilute Nitride semiconductor laser and amplifier components for Metro and access network
Author: Sun, Xiao
Awarding Body: University of Bristol
Current Institution: University of Bristol
Date of Award: 2013
Availability of Full Text:
Access from EThOS:
This thesis focuses on theoretical modelling of dilute nitride semiconductor Quantum Well (QW) lasers and Semiconductor Optical Amplifies (SOAs) considering compositional fluctuations of N in GaInNxAs1-x material system. Incorporation of N into GaInAs results in a huge reduction of the material bandgap and this has been successfully modelled using a Band Anti-Crossing (BAC) model in which the N acts as a defect in the GaInAs conduction band mixing with it and pushing it downwards. However compositional fluctuations of N in GaInNxAsl_x result in Quantum Dot (QD)-like fluctuations in the Conduction Band ,Edge (CBE). The observed QD-like fluctuations cause a broadening of the gain much in the .way it does for an inhomogeneous array of QDs. Therefore, the influence of these compositional fluctuations on the performance of GaInNxAs l_x QW lasers and SOAs motivates the research work.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available