Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.626202
Title: Single-source precursors for the aerosol assisted chemical vapour deposition of gallium arsenide
Author: Sathasivam, S.
Awarding Body: University College London (University of London)
Current Institution: University College London (University of London)
Date of Award: 2013
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Abstract:
This thesis describes the synthesis of single-source gallium arsenide (GaAs) precursors and the deposition of films on glass substrates using aerosol assisted chemical vapour deposition (AACVD). A range of precursors were synthesised including silyl arsine containing compounds such as [Me2GaAs(SiMe2Cy)2]2, [EtGaAs(SiMe2Cy)2]2, [Me2GaAs(SiPh3)2]2, and [Me2GaAs(SiMePh2)2]2. Novel dimeric precursors, [Me2GaAs(H)tBu]2 and [Et2GaAs(H)tBu]2, containing tertiary butyl groups have also been synthesised from tertiarybutyl arsine and trimethyl and triethylgallium. Compounds were analysed using 1H and 13C NMR, mass spectrometry and elemental analysis. The decomposition of [Me2GaAs(H)tBu]2 and [Et2GaAs(H)tBu]2 was studied using thermogravimetric analysis (TGA). Thin films of gallium arsenide were deposited on amorphous substrates using both an in situ approach with As(NMe2)3 and tBuAsH2 as the arsenic sources and GaMe3 as the gallium source as well as with the single-source precursors [Me2GaAs(H)tBu]2 and [Et2GaAs(H)tBu]2. All films were characterised using powder X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray (EDX) analysis. Some of the films were further characterised using X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS) and high-resolution transmission electron microscopy (HRTEM) to determine crystallinity.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.626202  DOI: Not available
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