Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.616457
Title: MOSFET transistor fabrication on AFM tip
Author: Rudnicki, Kamil
ISNI:       0000 0004 5347 4891
Awarding Body: University of Glasgow
Current Institution: University of Glasgow
Date of Award: 2014
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Abstract:
The project is concerned with the development of methods for the fabrication of magnetic sensor devices on Atomic Force Microscopy (AFM) probes and their characterization. The devices use the principle of the Hall effect (based on the Lorentz force) to sense the magnetic properties of a magnetized specimen. In the past Hall bar sensors have been fabricated using semimetals such as Bismuth, or using 2-d electron gas material based on heterojunctions in III-V material. The former probes are limited by low sensitivity. The latter are limited by the difficulty encountered when trying to integrate the device with a force-sensing cantilever. The highest spatial resolution reported for a Hall bar operating at room temperature is 50 nm. Due to quantum effects (long mean free path), scaling down devices based on high mobility material results in a drop in sensitivity. For magnetic material studies of current interest higher resolutions are required. To achieve this goal in a material system which is compatible with micromachining the proposed approach utilises silicon as the sensing material. Silicon Hall bars have already been reported to work for large scale devices. This thesis presents the development of p-type enhancement mode MOSFET transistor fabrication process on a tip of Atomic Force Microscope (AFM) probe. The active device fabrication process was developed in order to allow fabrication of a magnetic sensor for Scanning Hall Probe Microscope (SHPM). The Hall bar was constructed on the apex of the AFM tip of attractive mode probes. The fabrication is performed in batches by using common semiconductor techniques leading to micromachining of the Si substrate, formation of the active device and cantilever release step. The transistor characteristics are presented, compared with expected performance of the modelled device and the reasons for differences are discussed. In this work, a method for application of spin-on-dopant on highly topographic structures is developed. Other encountered process incompatibilities are dealt with to finally present a full process for p-type enhancement mode MOSFET transistor on AFM tip fabrication.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.616457  DOI: Not available
Keywords: TK Electrical engineering. Electronics Nuclear engineering
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