Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.605940
Title: Vacuum growth of N-octylphosphonic acid monolayer for low-voltage organic thin-film transistors
Author: Gupta, Swati
ISNI:       0000 0004 5359 6485
Awarding Body: University of Strathclyde
Current Institution: University of Strathclyde
Date of Award: 2014
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Abstract:
This thesis optimizes the vacuum, vapour-phase self-assembly of n-octyl phosphonic acid monolayer. This monolayer is chemisorbed to the aluminium oxide (AIOx) and together they form an ultra-thin gate dielectric in organic thin-film transistors based on pentacene. The electrical measurements of the transistors and the corresponding metal-insulator-metal structures were combined with the characterization of n-octylphosphonic acid monolayers using the atomic force microscopy, water contact angle measurement and Fourier transform infrared spectroscopy. The results show that the properties of the organic monolayer depend on its evaporation rate, growth temperature and the post-growth annealing and affect the performance of the as-fabricated transistors as well as the transistor bias-induced instability.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.605940  DOI: Not available
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