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Title: Nanotube based nanoelectromechanical devices for Ultra Large Scale Integration (ULSI)
Author: Jang, Jae Eun
Awarding Body: University of Cambridge
Current Institution: University of Cambridge
Date of Award: 2006
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Nanoelectromechanical (NEM) devices have recently become a highly active area of research, because they overcome the dimensional disadvantages of micro-electromechanical (MEM) devices. Compare to another electronic device, specially, NEM devices, employing vertical nanotube structures can maximize integration density of devices. Therefore NEM devices can be applied to array circuits where high integrated density is required, for example dynamic random access memory and biochemical sensors. In this research, carbon nanorube (CNT) based NEM switch, which constitutes the basic cell structure of a NEM device, has been realized. The switch device has also been extended to incorporate a capacitor enabling a new NEM-DRAM concept. The switch devices show a variety of switching models depending on the length and the number of MWCNTs used. The metal-insulator-carbon nanotube-metal (MICNM) structure has the potential of replacing the stack capacitor structure of traditional high integration density DRAM employing a silicon pillar. It can also be used generally in ULSI circuits where nano-size capacitor are required. For NEM-DRAM, the mechanical movement of the nanotube defines 'On' and 'OFF' states and the electrical signals which result lead to charge storage in a vertical capacitor structure as in a traditional DRAM. The structures and fabrication processes resulting from the research reported in the dissertation can be applied to various devices such as miniature robots, memory, sensor, and switch capacitor arrays as well as nano-size electronics.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available