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Title: Advanced high power semiconductor devices based on trench technology
Author: Huang, S.
Awarding Body: University of Cambridge
Current Institution: University of Cambridge
Date of Award: 2002
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MOS-gated power semiconductor devices have dominated the application areas in power electronics. Research on improving performance of these devices have always been motivated by industrial need. These devices were conventionally fabricated using DMOS technology. Trench technology, however, has now been widely adopted to enhance the behaviour of MOS-gated power semiconductor devices. The trench IGBT is very attractive for high voltage applications. This thesis first discusses the performance optimisation and design of device structure and technology parameters for high voltage trench IGBTs based on detailed simulations on 65. KV and 1.8 KV devices. A detailed short-circuit analysis of 1.2 KV PT and NPT IGBTs is also presented based on numerical simulation and experimental results. To improve the device performance further for high voltage power devices especially the IGBT, four novel device structure concepts, which are expected to be a new generation of power devices for high voltage applications and termed dynamic n-buffer IGBT (DB-IGBT), dual-channel IEGT (DC-IEGT), single gate MOS controlled current saturation thyristor (MCST) and anode injection efficiency controlled IGBT (IEC-IGBT), are then proposed and studied. By incorporating trench gates at the anode end of the basic trench IGBT structure, the DB-IGBT shows advantages over the conventional IGBT in terms of trade-off between turn-off energy loss and on-state voltage drop, and is very attractive for high frequency switching applications. The DC-IEGT which allows for an additional p-channel to collect holes during turn-off also shows superior overall performance over the conventional IEGT and IGBT and is characterised by low on-state voltage drop, fast switching and large SOA. The MCST operates in thyristor-like mode in the on-state when the anode voltage is low, and enters the IGBT-like mode automatically as the anode voltage increases. It offers low on-state voltage drop, low turn-off energy loss and high voltage current saturation capability. The anode injection enhancement effect due to reduction of the anode contact area in a transparent p-anode IGBT is discussed for the first time.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available