Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.604336
Title: Passivated silicon and diamond surfaces : mapping, modification and molecular adsorption
Author: Sharp, Peter
Awarding Body: University of Nottingham
Current Institution: University of Nottingham
Date of Award: 2013
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Abstract:
The contrasting surface chemistry of passivated and unpassivated Group IV elemental semiconductor surfaces fund amentally affects both their electronic properties and the binding of adsorbates. Partially passivated surfaces offer a way to explore these different environments simultaneously. Control of the surface properties by selective passivation also allows a route to direct the adsorption of atoms and molecules. Herein, we investigate and attempt to manipulate the properties of hydrogen-passivated silicon and diamond surfaces, and subsequently study their interaction with fullerenes. Hydrogen-passivated silicon surfaces have been studied extensively over the past few decades and it is possible to control the passivation of individual silicon atoms via STM hydrogen lithography. Despite this, hardly any work has been done using AFM and there have been no reports of for ce-meditated lithography. We have studied the H:Si(100)(2 x 1) surface with both STM and frequency modulated dynamic AFM. AFM images exhibit both conventional and inverted contrast imaging modes, which we explain in terms of the termination of the probe apex by comparing force spectra to DFT calculations. We also demonstrate hydrogen lithography via voltage pulsing using a Plus sensor.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.604336  DOI: Not available
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