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Title: Few-electron transfer devices for single-electron logic applications
Author: He, J.
Awarding Body: University of Cambridge
Current Institution: University of Cambridge
Date of Award: 2005
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Silicon-compatible single-electron circuit architectures may provide a promising solution for the development of very large-scale integrated circuits using nanoscale devices. In these circuits, single-electron charging effects may be used to control the transport of electrons with single-electron precision. Single-electron devices are also inherently small and have low power dissipation. This raises the possibility of very large-scale integrated circuits that combine large integration and low power dissipation. In this work, few-electron transfer devices, for use as the basic element for logic applications, are implemented using nanowire single-electron transistors, in silicon-on-insulator material. A two-way few-electron switch, based on the operation of two bi-directional electron pumps, was fabricated and characterised electrically at 4.2 K. The switch was implemented using three SETs and the circuit was driven by a sine-wave r.f. signal. It was possible to switch few-electron packets ~ 600 electrons in size, using an input gate voltage, from one entry branch into one of two exit branches. Another few-electron transfer device, the ‘universal electron switch’, similar in the general design to the two-way switch, was also fabricated and characterised at 4.2 K. This switch can switch electron packets ~ 10 electrons in size, from any one of three branches to any other branch. These switches may be used for the precise transfer and steering of few-electron packets and as the basic element in few-electron logic applications, such as binary decision diagram logic applications. A radio-frequency single-electron transistor was also developed in silicon-on-insulator material. This device incorporates an SET with an LC resonant circuit and forms a highly-sensitive fast-response electrometer. This device was characterised using 813 MHz microwave at 4.2 K, in order to investigate the high frequency response of an SOI single-electron transistor.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available