Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.601752
Title: Advanced materials in Si deep sub-micron metal-oxide semiconductor devices
Author: Varzgar, John Behruz
Awarding Body: University of Newcastle Upon Tyne
Current Institution: University of Newcastle upon Tyne
Date of Award: 2010
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Abstract:
The influence of advanced materials on the electrical characteristics of metal-oxide - semiconductor (MOS) devices has been investigated by means of electrical characterisation techniques. As aggressive scaling becomes increasingly challenging in order to maintain Moore's law, the inclusion of strained silicon and high-k technologies have become necessary. However, moving away from the traditional Silicon and Silicon Dioxide based material system has raised concerns over the potential degradation of key performance metrics. such as the interface trap density, carrier mobility and gate leakage current. This work has systematically studied the influence of material choice and process technology, with a view to ensuring the continued development in semiconductor technology.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.601752  DOI: Not available
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