Use this URL to cite or link to this record in EThOS:
Title: Thermoelectric properties on Ge/Si1−xGex superlattices
Author: Ferre Llin, Lourdes
ISNI:       0000 0004 5352 7340
Awarding Body: University of Glasgow
Current Institution: University of Glasgow
Date of Award: 2014
Availability of Full Text:
Access from EThOS:
Access from Institution:
Thermoelectric generation has been found to be a potential field which can be exploited in a wide range of applications. Presently the highest performances at room temperature have been using telluride-based devices, but these tech- nologies are not compatible with MEMs and CMOS processing. In this work Silicon and Germanium 2D superlattices have been studied using micro fabri- cated devices, which have been designed specifically to complete the thermal and electrical characterization of the different structures. Suspended 6-contact Hall bars with integrated heaters, thermometers and ohmic contacts, have been micro-fabricated to test the in-plane thermoelectric properties of p-type superlattices. The impact of quantum well thickness on the two thermoelectric figures of merit, for two heterostructures with different Ge content has been studied. On the other hand, etch mesa structures have been presented to study the cross-plane thermoelectric properties of p and n-type superlattices. In these experiments are presented: the impact of doping level on the two figures of merit, the impact of quantum well width on the two figures of merit, and the more efficient reduction of the thermal conductivity by blocking phonons with different wavelengths. The n-type results showed the highest figures of merit values reported in the literature for Te-free materials, presenting power factors of 12 mW/K2 · m, which exceeded by a factor of 3 the highest values reported in the literature. The results showed, that Si and Ge superlattices could compete with the current materials used to commercialise thermoelectric modules. In addi- tion, these materials have the advantage of being compatible with MEMs and CMOS processing, so that they could be integrated as energy harvesters to create complete autonomous sensors.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available
Keywords: Q Science (General) ; QC Physics ; TK Electrical engineering. Electronics Nuclear engineering