Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.596130
Title: SuperJunction insulated gate bipolar transistor
Author: Antoniou, M. A.
Awarding Body: University of Cambridge
Current Institution: University of Cambridge
Date of Award: 2009
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Abstract:
The main achievement of this work is that we show that by intelligently coupling the ideas and designs from various power semiconductor devices, that do not combine under conventional approaches, we can lower the turn-off losses by a factor of 5 (or more) when compared to state-of-the-art medium-high voltage power devices, while maintaining a similarly low on-state voltage drop. In this work we propose an optimised SuperJunction IGBT. The impact of varying the net doping of the n and p drift layer pillars was investigated and the device was optimised to deliver the best trade-off between the on-state and switching performance through extensive numerical simulations, both at room and high temperatures. A PSPICE based model of the SuperJunction IGBT was also developed. The results obtained are in good agreement with the device simulations results. The model allows engineers access to a simple and cheap tool to test and evaluate the performance of the SJIGBT. This model consists of an intrinsic MOSFET and a parallel combination of a wide and a narrow base pnp BJTs. A parasite JFET is also included to account for the restricted current flow between two adjacent p-wells. Here we propose a Semi Superjunction IGBT that maintains a high static and dynamic avalanche breakdown while improving dramatically (by one to two orders of magnitude) the failure rate under cosmic ray exposure. This is unrepentant for any other devices in the field. As a result, this device can provide the solution to unexpected power device breakdowns and therefore save the cost in replacing them and the distraction caused. In the same manner, the introduction of the ‘disconnected p-pillar’ in the Semi-SJIGBT dramatically improves the on-state performance and switching-off speed of the device when compared to the conventional Field Stop IGBT.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.596130  DOI: Not available
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