Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.591976
Title: Accurate statistical circuit simulation in the presence of statistical variability
Author: Asenov, Plamen
Awarding Body: University of Glasgow
Current Institution: University of Glasgow
Date of Award: 2013
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Abstract:
Semiconductor device performance variation due to the granular nature of charge and matter has become a key problem in the semiconductor industry. The main sources of this ‘statistical’ variability include random discrete dopants (RDD), line edge roughness (LER) and metal gate granularity (MGG). These variability sources have been studied extensively, however a methodology has not been developed to accurately represent this variability at a circuit and system level. In order to accurately represent statistical variability in real devices the GSS simulation toolchain was utilised to simulate 10,000 20/22nm n- and p-channel transistors including RDD, LER and MGG variability sources. A statistical compact modelling methodology was developed which accurately captured the behaviour of the simulated transistors, and produced compact model parameter distributions suitable for advanced compact model generation strategies like PCA and NPM. The resultant compact model libraries were then utilised to evaluate the impact of statistical variability on SRAM design, and to quantitatively evaluate the difference between accurate compact model generation using NPM with the Gaussian VT methodology. Over 5 million dynamic write simulations were performed, and showed that at advanced technology nodes, statistical variability cannot be accurately represented using Gaussian VT . The results also show that accurate modelling techniques can help reduced design margins by elimiating some of the pessimism of standard variability modelling approaches.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.591976  DOI: Not available
Keywords: TK Electrical engineering. Electronics Nuclear engineering
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