Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.588129
Title: New materials and processes for flexible nanoelectronics
Author: Ingram, Ian David Victor
Awarding Body: University of Manchester
Current Institution: University of Manchester
Date of Award: 2013
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Abstract:
Planar electronic devices represent an attractive approach towards roll-to-roll printed electronics without the need for the sequential, precisely aligned, patterning steps inherent in the fabrication of conventional ‘3D’ electronic devices. Self-switching diodes (SSDs) and in-plane-gate field-effect transistors (IPG-FETs) can be patterned using a single process into a substrate precoated with semiconductor.These devices function in depletion mode, requiring the semiconductor to be doped in order for the devices to function. To achieve this, a reliable and controllable method was developed for doping organic semiconducting polymers by the immersion of optimally deposited films in a solution of dopant. The process was shown to apply both semicrystalline and air-stable, amorphous materials indicating that the approach is broadly applicable to a wide range of organic semiconductors.Simultaneously with the development of the doping protocol specialised hot-embossing equipment was designed and constructed and a high-yielding method of patterning the structures of IPG-FETs and SSDs was arrived at. This method allowed for consistent and reliable patterning of features with a minimum line-width of 200nm.Following the development of these doping and patterning processes these were combined to fabricate controllably doped, functioning planar devices. SSDs showed true zero-threshold rectification behaviour with no observed breakdown in the reverse direction up to 100 V. IPG-FETs showed switching behaviour in response to an applied gate potential and were largely free of detectable gate leakage current, verifying the quality of the patterning process.Furthermore, high-performance semiconducting polymer PAAD was synthesised and characterised in field-effect transistors as steps towards its use in planar electronic devices. It was also shown that this material could be doped using the developed immersion doping protocol and that this protocol was compatible with top-gated device architectures and the use of fluoropolymer CYTOP as a dielectric.
Supervisor: Turner, Michael Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.588129  DOI: Not available
Keywords: In-plane-gate field-effect transistor ; self-switching diode ; IPG-FET ; SSD ; OFET ; Doping ; PAAD ; Conjugated polymer ; Nanoimprint lithography ; embossing ; planar nano-transistor
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