Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.574311
Title: Metal-oxide-based electronic devices
Author: Jin, Jidong
Awarding Body: University of Manchester
Current Institution: University of Manchester
Date of Award: 2013
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Abstract:
Metal oxides exhibit a wide range of chemical and electronic properties, making them an extremely interesting subject for numerous applications in modern electronics. The primary goal of this research is to develop metal-oxide-based electronic devices, including thin-film transistors (TFTs), resistance random-access memory (RRAM) and planar nano-devices. This research requires different processing techniques, novel device design concepts and optimisation of materials and devices. The first experiments were carried out to optimise the properties of zinc oxide (ZnO) semiconductors, in particular the carrier concentration, which determines the threshold voltage of the TFTs. Thermal annealing is one common method to affect carrier concentration and most work in the literature reports performing this process in a single-gas environment. In this work, however, annealing was carried out in a combination of air and nitrogen, and it was found that the threshold voltage could be tuned over a wide range of pre-determined values.Further experiments were undertaken to enhance the carrier mobility of ZnO TFTs, which is the most important material quality parameter. By optimising deposition conditions and incorporating a high-k gate dielectric layer, the devices showed saturation mobility values over 50 cm2/Vs at a low operating voltage of 4 V. This is, to our knowledge, one of the highest field-effect mobility values achieved in ZnO-based TFTs by room temperature sputtering. As an important type of metal-oxide-based novel memory devices, which have been studied intensively in the last few years, RRAM devices were also explored. New materials, such as tin oxide (SnOx), were tested, exhibiting bipolar-switching operations and a relatively large resistance ratio. As a novel process variation, anodisation was performed, which yielded less impressive results than SnOx, but with a potential for ultra-low-cost manufacturing. Finally, novel planar nano-devices were explored, which have much simpler structures than conventional multi-layered transistors and diodes. Three types of ZnO-based nano-devices (a side-gated transistor, a self-switching diode and a planar inverter) were fabricated using both e-beam lithography and chemical wet etching. After optimisation of the challenging wet etching procedure at nanometre scale, ZnO nano-devices with good reproducibility and reliability have been demonstrated.
Supervisor: Song, Aimin Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.574311  DOI: Not available
Keywords: metal oxide ; TFTs ; ZnO ; Tin oxide ; RRAM ; SSD ; SGT
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