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Title: Terahertz spectroscopy of thin-film semiconductors
Author: Merchant, Suzannah K. E.
Awarding Body: University of Oxford
Current Institution: University of Oxford
Date of Award: 2010
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Abstract:
This thesis concerns the study of equilibrium and photo excited carriers in thin-film semiconductors using terahertz time-domain spectroscopy (THz- TDS) and optical- pump terahertz-probe (OPTP) spectroscopy. In particular, it focuses on the develop- ment and application of a MATLAB program to extract the sample complex refractive index (and thereby the complex conductivity) from THz-TDS data. The parameter extraction procedure was developed to be effective in the case of thin-film samples for which the transmission function contains a substantial contribution from multiple internal reflections in the sample. The program's effectiveness was demonstrated in the case of a 30 nm-thick film of gold deposited on silicon; the program successfully extracted the complex refractive index while the original method failed. The program was applied in a study of thin-film nanoporous indium phosphide (InP). The frequency-dependent complex conductivity-obtained via THz- TDS meas- urements-was not Drude-like, as observed for bulk InP, but was qualitatively con- sistent with a plasmonic response. The time-resolved photoconductivity was obtained from OPTP spectroscopy measurements, and revealed that the presence of pores substantially increases the photo carrier lifetime compared with the value measured for bulk InP. This behaviour is attributed to the presence of surface-bound electronic states that pin the Fermi level at the pore surface, bending the electronic bands upwards. This creates a depletion region which contains the carriers away from the recombination sites at the surface. The significance of the role played by surface states in determining carrier be- haviour is further evidenced by a study of carrier dynamics in etched and surface- passivated semi-insulating gallium arsenide (SI-GaAs). Compared with an untreated sample, surface-passivated SI-GaAs exhibited a greater change in photoconductiv- ity upon generation of photocarriers and an increased photo carrier lifetime. These observations are attributed to an increased photo carrier mobility and a decreased recombination rate resulting from the removal of surface states.
Supervisor: Jonston, Michael ; Herz, Laura Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.572646  DOI: Not available
Keywords: Terahertz spectroscopy ; Semiconductor films
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