Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.556201
Title: Residual phase noise modelling of silicon bipolar amplifiers and ultra low phase noise ceramic dielectric resonator oscillators
Author: Theodoropoulos, Konstantinos
Awarding Body: University of York
Current Institution: University of York
Date of Award: 2009
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Abstract:
This thesis describes research into the modelling of residual 1/ f phase noise for Si bipolar amplifiers operating in the linear region and the design construction and measurements of L-Band (1.2 GHz) and C-Band (4.2 GHz and 4.6 GHz) ceramic dielectric resonator based ultra low phase noise oscillators using Si devices. It proposed and demonstrated that for Si bipolar amplifiers the 1/ f phase noise is largely due to the base emitter recombination flicker noise. The up conversion mechanism is described through linear approximation of the phase variation of the amplifier phase response by the variation of the device parameters (Cbc, Cbe, gm, re) caused by the recombination 1/ f noise. The amplifier phase response describes the device over the whole frequency range of operation where the influence of the poles and zeros is investigated. It is found that for a common emitter amplifier it is sufficient to only incorporate the effect of the device poles to describe the phase noise behaviour over most of its operational frequency range. Simulations predict the measurements of others including the flattening of the PM noise at frequencies beyond f3dB, not predicted by previous models. A novel ceramic dielectric resonator based oscillator at 1.2 GHz is described. The oscillator achieves phase noise of -171.8 d. Bc] Hz at 10 kHz offset and ~ 144.5 d. Bc] H z at 1 kHz which is the lowest noise reported in the literature at this frequency band. To achieve these results extensive optimisation of amplifiers has been taken place. For example the amplifiers used in the oscillator produce a very low phase noise better than -182 dBc / Hz at 10 kHz and -175 dBc / Hz at 1 kHz offset from the carrier respectively. Also low residual phase noise narrow band tuning and high power handling phase shifters are reported for the use in oscilIator. Two oscillators at C-Band (4.2 GHz and 4.6 GHz) based on ceramic resonators are described. The 4.2 GHz Oscillator provides a phase noise of -153 dBc/ Hz at 10 kHz and -128 dBc/ Hz at 1 kHz offset from the carrier, which is the lowest reported in literature for that type of oscillators. The 4.6 GHz oscillator phase noise is -149 d. Bc/Hz at 10 kHz and -119.2 d. Bc/Hz at 1 kHz offsets respectively. Both oscillators used the same configuration and the same amplification devices and topology. The improved performance is mainly due to the use of low residual phase noise silicon bipolar amplifiers operated in a push pull configuration, where in literature amplifiers employing SiGe HBTs have been used.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.556201  DOI: Not available
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