Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.541264
Title: Characterisation and material removal properties of the RAP™ process
Author: O'Brien, William John
Awarding Body: Cranfield University
Current Institution: Cranfield University
Date of Award: 2011
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Abstract:
The Reactive Atom Plasma® (RAP) process is a plasma chemical etching process. RAP was developed at RAPT Industries as a process for removing subsurface damage from silicon carbide optics. The process is being investigated at Cranfield University as a novel method for the fine surface correction of large optics, with the aim of shortening the manufacturing period of the next generation of large telescopes. RAP offers material removal rates that are up to 10 times higher than those of ion beam figuring, the current state-of-the-art technique and the convenience in that it can be operated at atmospheric pressure. Cont/d.
Supervisor: Nicholls, J. R. ; Shore, Paul Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.541264  DOI: Not available
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