Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.509395
Title: Structural and Electronic Properties of III-V semiconductors studied through ab initio techniques and Empirical tight binding
Author: Garg, Raman
Awarding Body: The University of Manchester
Current Institution: University of Manchester
Date of Award: 2009
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Supervisor: Not available Sponsor: Not available
Qualification Name: Faculty of Engineering and Physical Sciences Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.509395  DOI: Not available
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