Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.501651
Title: GaN-based microcavities : fabrication, characterisation and development
Author: Bejtka, Katarzyna
ISNI:       0000 0001 3849 4884
Awarding Body: The University of Strathclyde
Current Institution: University of Strathclyde
Date of Award: 2008
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Abstract:
This thesis describes the fabrication and characterisation of double dielectric mirror GaN-based microcavities (MCs) along with investigation of the properties of various materials required for them, including GaN on AlInN, AlGaN, AlInGaN, and the use of FS-GaN substrate. Several processing routes for MC fabrication are detailed, with characterisation measurements after each step and for completed structures. Strong coupling between an exciton and a photon was observed for some approaches. The structures were grown by MOVPE and MBE on FS-GaN, sapphire and silicon substrates. Microcavities were fabricated using various techniques for substrate removal in order to access the back-side of active region for deposition of the bottom mirror. The finalised structures were characterised by optical spectroscopy. The structures grown on silicon resulted in the first observation of SC in transmission measurements for III-nitrides. High quality factors were observed from MCs grown on FS-GaN and on GaN-on-sapphire templates. These approaches open the way to improved structural quality of the active region, resulting from the use of substrates with low TDD.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.501651  DOI: Not available
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