Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.493571
Title: Electronic properties of defects in silicon and related materials
Author: Mitromara, Niki
ISNI:       0000 0001 3412 6873
Awarding Body: Sheffield Hallam University
Current Institution: Sheffield Hallam University
Date of Award: 2008
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Abstract:
Efforts in the current semiconductor industry are focused on the production of smaller, more efficient and inexpensive devices of higher packing density. As silicon is the dominant semiconductor implemented for the fabrication of the majority of semiconductor devices, perpetual research has focused on the improvement of its properties and the realisation of the most efficient structures. This thesis presents the electrical characterisation of two different diode structures that are important for the present and future generations of electronic devices.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.493571  DOI: Not available
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