Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.493213
Title: Deactivation of non-melt laser annealed boron ultra-shallow junctions
Author: Sharp, James Alexander
Awarding Body: University of Surrey
Current Institution: University of Surrey
Date of Award: 2007
Availability of Full Text:
Access through EThOS:
Abstract:
The demand for faster, smaller and cheaper electronic devices such as mobile phones and mp3 players, together with Moore's law, are the driving forces behind the miniaturisation of transistors in silicon-based processors and memory. As the aggressive downscaling of the transistors continues, stringent requirements are placed on the most difficult parts of the transistor to fabricate: the source/drain extension regions, which are required to be ultra-shallow and highly-active. This thesis investigates the use of a scanning non-melt laser to anneal boron implanted into germanium pre-amorphised silicon to form ultra-shallow junctions for future transistors.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.493213  DOI: Not available
Share: