Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.488560
Title: Experimental and theoretical studies of rare earth doped 111-nitride semiconductor properties.
Author: Rogan, Irman S.
ISNI:       0000 0001 3532 2884
Awarding Body: University of Strathclyde
Current Institution: University of Strathclyde
Date of Award: 2008
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Abstract:
In this thesis I present optical and structural investigations of RE ions doped in-situ or implanted into III-nitride semiconductors. The optical studies used cathodoluminescence (CL), photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopies. The structural properties employed atomic force microscopy (AFM), scanning electron microscopy (SEM), Rutherford backscattering spectrometry (RBS) and x-ray Diffraction (XRD) techniques.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.488560  DOI: Not available
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