Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.468949
Title: The pressure dependence of transferred electron effects in gallium arsenide, indium phosphide and induim arsenide
Author: Pickering, Christopher
Awarding Body: University of Surrey
Current Institution: University of Surrey
Date of Award: 1976
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Abstract:
The high electric field properties of GaAs have been investigated using a uniaxial stress apparatus, developed at the University of Surrey, and the hydrostatic pressure equipment at STL. An initial increase of the Gunn effect threshold field with pressure was observed, in contrast to previous measurements which are explained qualitatively in terms of pressure effects on non-ohmic contacts. Comparison of the results with Monte-Carlo calculations suggests that it may be incorrect to ignore the L1c minima as in previous analyses.
Supervisor: Not available Sponsor: Not available
Qualification Name: Doctoral Thesis - University of Surrey. Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.468949  DOI: Not available
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