Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.443049
Title: Reduced boron diffusion under point defect injection in fluorine implanted silicon
Author: Kham, Man Niang.
ISNI:       0000 0001 3598 1492
Awarding Body: University of Southampton
Current Institution: University of Southampton
Date of Award: 2007
Availability of Full Text:
Full text unavailable from EThOS. Please contact the current institution’s library for further details.
Abstract:
No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.443049  DOI: Not available
Share: