Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.433197
Title: Impact of intrinsic parameter fluctuations in ultra-thin body silicon-on-insulator MOSFET on 6-transistor SRAM cell
Author: Samsudin, Khairulmizam
ISNI:       0000 0001 3548 2642
Awarding Body: University of Glasgow
Current Institution: University of Glasgow
Date of Award: 2006
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Abstract:
As CMOS device dimensions are being aggressively scaled, the device characteristic must be assessed against fundamental physical limits. Nanoscale device modelling and statistical circuit analysis is needed to provide designer with ability to explore innovative new MOSFET devices as well as understanding the limits of the scaling process. This work introduces a systematic simulation methodology to investigate the impact of intrinsic parameter fluctuation for a novel Ultra-Thin-Body (UTB) Silicon-on-Insulator (SOI) transistor on the corresponding device and circuits. It provides essential link between physical device-level numerical simulation and circuit-level simulation. A systematic analysis of the effects of random discrete dopants, body thickness variations and line edge roughness on a well scaled 10 nm, 7.5 nm and 5 nm channel length UTB-SOI MOSFET is performed. To fully realise the performance benefits of UTB-SOI based SRAM cells a statistical circuit simulation methodology which can fully capture intrinsic parameter fluctuations information into the compact model is developed. The impact of intrinsic parameter fluctuations on the stability and performance of 6T SRAM has been investigated. A comparison with the behaviour of a 6T SRAM based on a conventional 35 nm MOSFET is also presented.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.433197  DOI: Not available
Keywords: T Technology (General)
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