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Title: Design of a reliability methodology : modelling the influence of temperature on gate oxide reliability
Author: Owens, Gethin Lloyd
Awarding Body: Durham University
Current Institution: Durham University
Date of Award: 2007
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An Integrated Reliability Methodology (IRM) is presented that encompasses the changes that technology growth has brought with it and includes several new device degradation models. Each model is based on a physics of failure approach and includes on the effects of temperature. At all stages the models are verified experimentally on modern deep sub-micron devices. The research provides the foundations of a tool which gives the user the opportunity to make appropriate trade-offs between performance and reliability, and that can be implemented in the early stages of product development.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available