Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.425815
Title: Blistering and exfoliation of ion-implanted GaAs
Author: Webb, Melanie
Awarding Body: University of Surrey
Current Institution: University of Surrey
Date of Award: 2005
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Abstract:
This thesis investigates a technique of transferring thin layers of GaAs onto other substrates, called the ion-cut (or smart-cut) process. The process, and the progress that had already been made to optimise and understand it is described in detail in the first chapter, and the project aims are presented in the context of these developments. The following chapter describes the experimental setups used in this work, with the main techniques involving ion beam analysis, x ray diffraction and Nomarksi, atomic force and electron microscopy. The development of a new method for controlling the flux and temperature of implantation is described in this thesis, and is now available to other users of the Ion Beam Centre at the University of Surrey. A new method for interpreting the channelling RBS (Rutherford Backscattering Spectrometry) spectra in blistered samples has been developed, and is described in chapter 4. The results presented in this thesis show that the ion-cut process is dependent on the flux of ion implantation, and demonstrate that this can be explained in terms of the relative concentration of damage introduced by the ion implantation process. In addition, the role of implant temperature on the process has also been investigated in detail for the first time. Finally, the suitability of implanting helium or neon under different conditions instead of hydrogen has been investigated and it is shown that while helium is more effective than hydrogen (around half the dose is required for helium implantation compared with hydrogen), neon is not a suitable alternative. Such an investigation is essential for optimisation of this process, which has eclectic applications including the fabrication of lasers, solar cells and the integration of GaAs and silicon materials on a single chip.
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.425815  DOI: Not available
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