Use this URL to cite or link to this record in EThOS:
Title: Degradation of gate dielectric under hot hole stress.
Author: Sii, How King.
ISNI:       0000 0001 3409 4672
Awarding Body: Liverpool John Moores University
Current Institution: Liverpool John Moores University
Date of Award: 2000
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No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID:  DOI: Not available