Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.391326
Title: Electronic structure of GaSb/GaAs and Si/Ge quantum dots
Author: North, Stephen Michael
ISNI:       0000 0001 2448 8328
Awarding Body: Newcastle University
Current Institution: University of Newcastle upon Tyne
Date of Award: 2001
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Abstract:
There are significant differences between experiment and theoretical calculations of the electronic structure of GaSb/GaAs self-assembled quantum dots. Using a multi-band effective mass approximation it is shown that the influence of size and geometry of quantum dots has little or no effect in determining the hydrostatic strain. Furthermore, the valenceband ground state energies of the quantum dots studied are surprisingly consistent. This apparent paradox attributed to the influence of biaxial strain in shaping the heavy-hole and light-hole potentials. Consequently, it is shown that a simple, hydrostatically derived potential is insufficient to accurately describe the electronic structure of such quantum dots. In addition, using the latest experimental results measuring the conductionband offset, it has been shown that much better experimental contact may be achieved for the magnitude of the transition energies derived compared to theoretically derived transition energies. The transition energies of Si/Ge self-assembled quantum dots has also been calculated. In particular, a range of quantum dot structures have been proposed that are predicted to have an optical response in the 3-5 micron range.
Supervisor: Not available Sponsor: Engineering and Physical Sciences Research Council
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.391326  DOI: Not available
Keywords: ELECTRONIC STRUCTURE; GALLIUM ANTIMONIDES; GALLIUM ARSENIDES; INTERFACES; SOLID CLUSTERS; BAND THEORY; GROUND STATES; SILICON; GERMANIUM Physics Solid state physics
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