Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.380790
Title: On the growth of (100) GaAs and (100) InAs by molecular beam epitaxy
Author: Newstead, S. M.
Awarding Body: City of London Polytechnic
Current Institution: London Metropolitan University
Date of Award: 1987
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Abstract:
No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.380790  DOI: Not available
Keywords: Semiconductor lattice study Solid state physics Electric apparatus and appliances Electronic apparatus and appliances
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