Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.368206
Title: Transmission electron microscopy of defects and internal fields in GaN structures.
Author: Mokhtari, Hossein.
ISNI:       0000 0001 3414 0640
Awarding Body: University of Bristol
Current Institution: University of Bristol
Date of Award: 2001
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Abstract:
No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.368206  DOI: Not available
Keywords: TRANSMISSION ELECTRON MICROSCOPY; MICROSTRUCTURE; GALLIUM NITRIDES; INDIUM NITRIDES; INTERFACES; MOLECULAR BEAM EPITAXY; HEXAGONAL LATTICES; TEMPERATURE DEPENDENCE; THIN FILMS; SCREW DISLOCATIONS; SILICON ADDITIONS; CRYSTAL DOPING; ELECTRON SPECTROSCOPY Solid state physics
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