Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.367379
Title: Oxygen-related point defects in silicon and germanium.
Author: Coutinho, Jose Pedro Abreu.
Awarding Body: University of Exeter
Current Institution: University of Exeter
Date of Award: 2001
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Abstract:
No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.367379  DOI: Not available
Keywords: SILICON; GERMANIUM; MONOCRYSTALS; INTERSTITIALS; OXYGEN; ELECTRONS; CRYSTAL MODELS Solid state physics Physics
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