Use this URL to cite or link to this record in EThOS: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.367258
Title: The development of p-type silicon detectors for the high radiation regions of the LHC.
Author: Hanlon, Moshe David Leavers.
ISNI:       0000 0001 3530 1610
Awarding Body: University of Liverpool
Current Institution: University of Liverpool
Date of Award: 1998
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Abstract:
No abstract available
Supervisor: Not available Sponsor: Not available
Qualification Name: Thesis (Ph.D.) Qualification Level: Doctoral
EThOS ID: uk.bl.ethos.367258  DOI: Not available
Keywords: RADIATION DETECTION; SI SEMICONDUCTOR DETECTORS; POSITION SENSITIVE DETECTORS; CERN LHC; READOUT SYSTEMS; SPATIAL RESOLUTION; PERFORMANCE TESTING; PHYSICAL RADIATION EFFECTS; LEAKAGE CURRENT; P-TYPE CONDUCTORS Nuclear physics Solid state physics
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